2.2ppm/°C补偿带隙电压参考与双端电流修剪技术

Wenxin Yu, Lenian He, Jianxiong Xi, Quan Sun, Changyou Men
{"title":"2.2ppm/°C补偿带隙电压参考与双端电流修剪技术","authors":"Wenxin Yu, Lenian He, Jianxiong Xi, Quan Sun, Changyou Men","doi":"10.1587/elex.19.20220390","DOIUrl":null,"url":null,"abstract":"This paper presents a high-precision bandgap voltage reference (BGR) with a double-ended current trimming technique. A high-order curvature compensation method is adopted to compensate for the nonlinearity of V BE . The proposed trimming technique using the one-time programmable (OTP) programming cancels the errors caused by process variation and enables bulk production, which achieves a best TC of 2.2 ppm/℃ from -40 ℃ to 125 ℃. The proposed BGR is fabricated in a 0.18-um BCD process with an active area of 0.329 mm 2 . The line sensitivity is 0.18 %/V operating from 2.9 V to 3.6 V.","PeriodicalId":13437,"journal":{"name":"IEICE Electron. Express","volume":"9 1","pages":"20220390"},"PeriodicalIF":0.0000,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A 2.2ppm/°C compensated bandgap voltage reference with a double-ended current trimming technique\",\"authors\":\"Wenxin Yu, Lenian He, Jianxiong Xi, Quan Sun, Changyou Men\",\"doi\":\"10.1587/elex.19.20220390\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a high-precision bandgap voltage reference (BGR) with a double-ended current trimming technique. A high-order curvature compensation method is adopted to compensate for the nonlinearity of V BE . The proposed trimming technique using the one-time programmable (OTP) programming cancels the errors caused by process variation and enables bulk production, which achieves a best TC of 2.2 ppm/℃ from -40 ℃ to 125 ℃. The proposed BGR is fabricated in a 0.18-um BCD process with an active area of 0.329 mm 2 . The line sensitivity is 0.18 %/V operating from 2.9 V to 3.6 V.\",\"PeriodicalId\":13437,\"journal\":{\"name\":\"IEICE Electron. Express\",\"volume\":\"9 1\",\"pages\":\"20220390\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEICE Electron. Express\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1587/elex.19.20220390\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEICE Electron. Express","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1587/elex.19.20220390","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

提出了一种采用双端电流微调技术的高精度带隙基准电压(BGR)。采用一种高阶曲率补偿方法来补偿V - BE的非线性。采用一次性可编程(OTP)编程的修整技术消除了工艺变化引起的误差,实现了批量生产,在-40℃至125℃范围内,最佳TC为2.2 ppm/℃。所提出的BGR是在0.18 um的BCD工艺中制造的,活性面积为0.329 mm2。在2.9 V至3.6 V范围内,线路灵敏度为0.18% /V。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 2.2ppm/°C compensated bandgap voltage reference with a double-ended current trimming technique
This paper presents a high-precision bandgap voltage reference (BGR) with a double-ended current trimming technique. A high-order curvature compensation method is adopted to compensate for the nonlinearity of V BE . The proposed trimming technique using the one-time programmable (OTP) programming cancels the errors caused by process variation and enables bulk production, which achieves a best TC of 2.2 ppm/℃ from -40 ℃ to 125 ℃. The proposed BGR is fabricated in a 0.18-um BCD process with an active area of 0.329 mm 2 . The line sensitivity is 0.18 %/V operating from 2.9 V to 3.6 V.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信