O. Orlov, V. Murashev, A. Lebedev, V. Orlov, S. Ivanov
{"title":"提高HFO2 ReRAM细胞特性可重复性的特点","authors":"O. Orlov, V. Murashev, A. Lebedev, V. Orlov, S. Ivanov","doi":"10.1109/EICONRUS.2019.8657230","DOIUrl":null,"url":null,"abstract":"Main characteristics of ReRAM cells based on hafnium oxide were studied. A significant variation of these characteristics was observed from both cycle-to-cycle and cell-to-cell. Specialized methods should be applied for improving the cells characteristics reproducibility. The results of the experimental investigation of ReRAM 1T-1R cells are presented in this work.","PeriodicalId":6748,"journal":{"name":"2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus)","volume":"9 1","pages":"2087-2089"},"PeriodicalIF":0.0000,"publicationDate":"2019-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Features of the Improving of the HFO2 ReRAM Cells Characteristics Reproducibility\",\"authors\":\"O. Orlov, V. Murashev, A. Lebedev, V. Orlov, S. Ivanov\",\"doi\":\"10.1109/EICONRUS.2019.8657230\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Main characteristics of ReRAM cells based on hafnium oxide were studied. A significant variation of these characteristics was observed from both cycle-to-cycle and cell-to-cell. Specialized methods should be applied for improving the cells characteristics reproducibility. The results of the experimental investigation of ReRAM 1T-1R cells are presented in this work.\",\"PeriodicalId\":6748,\"journal\":{\"name\":\"2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus)\",\"volume\":\"9 1\",\"pages\":\"2087-2089\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EICONRUS.2019.8657230\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EICONRUS.2019.8657230","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Features of the Improving of the HFO2 ReRAM Cells Characteristics Reproducibility
Main characteristics of ReRAM cells based on hafnium oxide were studied. A significant variation of these characteristics was observed from both cycle-to-cycle and cell-to-cell. Specialized methods should be applied for improving the cells characteristics reproducibility. The results of the experimental investigation of ReRAM 1T-1R cells are presented in this work.