多元素金属靶反应溅射PLT(28)的拟电性能

Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1994-08-07 DOI:10.1109/ISAF.1994.522405

H.H. Kim, K. Sohn, L. Casas, R. Pfeffer, R. Lareau

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引用次数: 1

摘要

采用反应直流磁控溅射法制备了钛酸铅镧(PLT, La=28 mol %)薄膜。在450 ~ 750℃/spl温度范围内对所有沉积态PLT薄膜进行沉积后退火处理。在Pt/Ti/SiO/ sub2 /Si多层衬底上制备了金属(Pt)- plt -金属(Pt) (MDM)结构作为ULSI DRAM应用的平面电容器。使用200 nm厚的拟电PLT薄膜时，介电常数和耗散系数的最佳值分别为1216和0.018。电荷存储密度最高为12.5 /spl mu/C/cm/sup 2/，漏电流密度最低为0.1 /spl mu/A/cm/sup 2/。

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Paraelectric properties of PLT(28) reactively sputtered by multi-element metal target

Lead lanthanum titanate (PLT, La=28 mol %) thin films were prepared by a multi-element metal target using reactive dc magnetron sputtering system. A post-deposition annealing treatment was applied to all as-deposited PLT thin films at the temperature ranges of 450-750/spl deg/C. Metal(Pt)-PLT-metal(Pt) (MDM) configuration as a planar capacitor of ULSI DRAM application is fabricated on Pt/Ti/SiO/sub 2//Si multi-layer substrate. The best results of dielectric constant and dissipation factor, using the paraelectric PLT thin film of 200 nm thick, were 1216 and 0.018, respectively. The highest charge storage density was 12.5 /spl mu/C/cm/sup 2/ and the lowest leakage current density was 0.1 /spl mu/A/cm/sup 2/.

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Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics

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