Razor-lite:一种用于45nm SOI CMOS时间余量恢复的侧通道错误检测寄存器

Seongjong Kim, Inyong Kwon, D. Fick, Myungbo Kim, Yen-Po Chen, D. Sylvester
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引用次数: 58

摘要

由于亚波长光刻和其他制造挑战,先进的CMOS技术极易受到工艺、电压和温度(PVT)变化的影响。这些变化会导致性能的不确定性,因此必须增加时间裕度以保证正确操作。最终,这会导致性能或能量的损失:性能的损失直接通过降低时钟频率,而能量的牺牲是在比满足非边际时序要求所需的更高的电压下工作。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Razor-lite: A side-channel error-detection register for timing-margin recovery in 45nm SOI CMOS
Advanced CMOS technologies are highly susceptible to process, voltage, and temperature (PVT) variations due to sub-wavelength lithography and other manufacturing challenges. These variations cause performance uncertainty for which timing margins must be added to guarantee correct operation. Ultimately, this results in lost performance or energy: performance is lost directly through reduced clock frequency, while energy is sacrificed by operating at a higher voltage than necessary to meet non-margined timing requirements.
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