气体传感器装置制作

2017 IEEE 7th International Conference Nanomaterials: Application & Properties (NAP) Pub Date : 2017-09-01 DOI:10.1109/NAP.2017.8190193

S. Nagirnyak, T. Dontsova

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引用次数: 7

摘要

本文分析了典型半导体气体传感器的结构，描述了器件生产的主要阶段。注意力集中在每个设备部件的创建过程上。分析了加热元件的拓扑结构和几何形状以及被测电极的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Gas sensor device creation

The paper considers the structure of typical semiconductor gas sensor and describes the main stages of device production. Attention is focused on processes for creation of each device part. The influence of topology and geometry of heater element and measured electrodes is presented.

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来源期刊

2017 IEEE 7th International Conference Nanomaterials: Application & Properties (NAP)

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