用时间分辨太赫兹光谱定量CdTe太阳能电池的体和表面复合

2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) Pub Date : 2021-06-20 DOI:10.1109/PVSC43889.2021.9518559

Mohammad M. Taheri, Triet M. Truong, S. Fields, W. Shafarman, B. McCandless, J. B. Baxter

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引用次数: 0

摘要

了解复合机制的本质对于提高光伏器件的功率转换效率至关重要。在这里，我们使用时间分辨太赫兹光谱和数值模拟相结合的方法来确定CdTe薄膜堆的整体Shockley-Read-Hall寿命以及界面和背面复合速度。利用传统的激光刻划加工线网格器件结构，便于测量。对经过CdCl2处理的玻璃/FTO/SnO2/CdS/CdTe层叠的评价表明，CdTe吸收剂的整体寿命为1.6 ns，而背面复合速度为~6x104 cm/s，表明CdTe/CdS界面复合速度对载流子动力学没有显著影响。

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Quantifying Bulk and Surface Recombination in CdTe Solar Cells Using Time-Resolved Terahertz Spectroscopy

Understanding the nature of recombination mechanisms is essential for higher power conversion efficiency in photovoltaic (PV) devices. Here we use a combination of time-resolved terahertz spectroscopy and numerical modeling to determine the bulk Shockley-Read-Hall lifetime and interface and back surface recombination velocities in CdTe thin film stacks. The measurement was facilitated by fabricating wire-grid device structures using conventional laser scribing. Evaluation of a glass/FTO/SnO2/CdS/CdTe stack treated with CdCl2 allowed separation of the CdTe absorber bulk lifetime, 1.6 ns, from the back surface recombination velocity, ~6x104 cm/s, and indicated that CdTe/CdS interface recombination velocity had no significant impact on carrier dynamics.

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2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)

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