{"title":"富氮条件下Si衬底上AlGaN脱膜的分子束外延生长及表征","authors":"Qihua Zhang, Xue Yin, Songrui Zhao","doi":"10.1109/PN52152.2021.9597930","DOIUrl":null,"url":null,"abstract":"In this work, we demonstrate AlGaN epilayer in the nitrogen-rich condition on Si by molecular beam epitaxy. The epilayer is further confirmed to be nitrogen-polar.","PeriodicalId":6789,"journal":{"name":"2021 Photonics North (PN)","volume":"15 1","pages":"1-1"},"PeriodicalIF":0.0000,"publicationDate":"2021-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Molecular Beam Epitaxy Growth and Characterization of AlGaN Epilayer in the Nitrogen-rich Condition on Si Substrate\",\"authors\":\"Qihua Zhang, Xue Yin, Songrui Zhao\",\"doi\":\"10.1109/PN52152.2021.9597930\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we demonstrate AlGaN epilayer in the nitrogen-rich condition on Si by molecular beam epitaxy. The epilayer is further confirmed to be nitrogen-polar.\",\"PeriodicalId\":6789,\"journal\":{\"name\":\"2021 Photonics North (PN)\",\"volume\":\"15 1\",\"pages\":\"1-1\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-05-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 Photonics North (PN)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PN52152.2021.9597930\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 Photonics North (PN)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PN52152.2021.9597930","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Molecular Beam Epitaxy Growth and Characterization of AlGaN Epilayer in the Nitrogen-rich Condition on Si Substrate
In this work, we demonstrate AlGaN epilayer in the nitrogen-rich condition on Si by molecular beam epitaxy. The epilayer is further confirmed to be nitrogen-polar.
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