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具有部分耗尽吸收区和耗尽非吸收区的InP-InGaAs-NiO p-i-n光电二极管

2021 19th International Conference on Optical Communications and Networks (ICOCN) Pub Date : 2021-08-23 DOI:10.1109/ICOCN53177.2021.9563661
Xuejie Wang, Dan Yang, Yongqing Huang, Huayun Zhi, Kai Liu, X. Duan, X. Ren
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引用次数: 0

摘要

提出了一种利用NiO薄膜实现p侧全覆盖电极和顶部照明的InP-InGaAs-NiO p-i-n光电二极管。该结构比传统结构增加了约27mA的直流饱和电流，并且具有更好的带宽。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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An InP-InGaAs-NiO p-i-n photodiode with partially depleted-absorber and depleted nonabsorbing region
An InP-InGaAs-NiO p-i-n photodiode achieving p-side full coverage electrode and top illumination by using NiO films is proposed. This structure increases DC saturation current by about 27mA than conventional structure and has better bandwidth.
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来源期刊
2021 19th International Conference on Optical Communications and Networks (ICOCN)
2021 19th International Conference on Optical Communications and Networks (ICOCN)
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