{"title":"用于静电能量采集器的低正向偏压有源二极管电路","authors":"Mark Lipski, Yin Li, M. Misra, S. Gregori","doi":"10.1109/ISCAS.2018.8351218","DOIUrl":null,"url":null,"abstract":"This paper presents a MOS active diode circuit that is suitable for energy harvesting applications. The proposed active diode has a minimized reverse leakage and achieves a low forward voltage. The design is implemented and simulated in TSMC 65 nm CMOS technology. Compared to the diode-connected MOS transistor, which has a forward voltage around 300 to 400 mV, the proposed diode demonstrates a near zero forward voltage with minimum supply voltage. The application of the proposed design is demonstrated through a regenerative energy harvester, and the performance is simulated and compared with measurement results from a harvester with regular diodes.","PeriodicalId":6569,"journal":{"name":"2018 IEEE International Symposium on Circuits and Systems (ISCAS)","volume":"14 1","pages":"1-5"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A Low Forward Bias Active Diode Circuit for Electrostatic Energy Harvesters\",\"authors\":\"Mark Lipski, Yin Li, M. Misra, S. Gregori\",\"doi\":\"10.1109/ISCAS.2018.8351218\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a MOS active diode circuit that is suitable for energy harvesting applications. The proposed active diode has a minimized reverse leakage and achieves a low forward voltage. The design is implemented and simulated in TSMC 65 nm CMOS technology. Compared to the diode-connected MOS transistor, which has a forward voltage around 300 to 400 mV, the proposed diode demonstrates a near zero forward voltage with minimum supply voltage. The application of the proposed design is demonstrated through a regenerative energy harvester, and the performance is simulated and compared with measurement results from a harvester with regular diodes.\",\"PeriodicalId\":6569,\"journal\":{\"name\":\"2018 IEEE International Symposium on Circuits and Systems (ISCAS)\",\"volume\":\"14 1\",\"pages\":\"1-5\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-05-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Symposium on Circuits and Systems (ISCAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCAS.2018.8351218\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Symposium on Circuits and Systems (ISCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCAS.2018.8351218","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Low Forward Bias Active Diode Circuit for Electrostatic Energy Harvesters
This paper presents a MOS active diode circuit that is suitable for energy harvesting applications. The proposed active diode has a minimized reverse leakage and achieves a low forward voltage. The design is implemented and simulated in TSMC 65 nm CMOS technology. Compared to the diode-connected MOS transistor, which has a forward voltage around 300 to 400 mV, the proposed diode demonstrates a near zero forward voltage with minimum supply voltage. The application of the proposed design is demonstrated through a regenerative energy harvester, and the performance is simulated and compared with measurement results from a harvester with regular diodes.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
