干氧化和热退火对AlN/GaN/AlN/Si(111)的影响及其电学特性评价

IF 0.8 Q3 MULTIDISCIPLINARY SCIENCES
M. Yusoff, A. Mahyuddin, Z. Hassan, Muhammad, Syariffudin Yahya
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引用次数: 0

摘要

我们提出了一种改善AlN/GaN/AlN/Si(111)衬底的铂(Pt)肖特基接触暗电流的技术。采用射频分子束外延技术在硅衬底上成功生长出了AlN/GaN/AlN/异质结构样品。透射电镜(TEM)验证了层间异质结构样品的高质量。在TEM图像中,检测到一层间距小于1 nm的优质单界面层。x射线衍射测量得到的强显著峰表明,样品的每一生长层都具有较高的结构质量。采用干氧化和热退火相结合的方法,有效地降低了AlN/GaN/AlN/Si(111)衬底肖特基触点的泄漏电流。能量色散x射线分析揭示了元素氧的存在。干氧化提高了样品的表面粗糙度和表面活性面积。Al2O3有助于AlN/GaN/AlN/Si(111)衬底的Pt Schottky触点的低泄漏电流。Al2O3层起到绝缘层的作用,减缓了器件的电流流动。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of Dry Oxidation and Thermal Annealing on AlN/GaN/AlN/Si (111) and Evaluation of its Electrical Characteristics
We proposed a technique for improving the platinum (Pt) Schottky contact dark current of the AlN/GaN/AlN/Si(111) substrate. The AlN/GaN/AlN/ heterostructure sample was successfully grown on a silicon substrate by radio frequency molecular beam epitaxy. The high quality of the interlayer heterostructure sample was verified by transmission electron microscopy (TEM). From the TEM image, a good quality single interface layer with spacing less than 1 nm was detected. The strong significant peaks obtained by X-ray diffraction measurement indicated that the sample has a high structural quality for each grown layer. Dry oxidation and thermal annealing were used in conjunction to effectively reduce the leakage current of the Schottky contact of the AlN/GaN/AlN/Si(111) substrate. Energy-dispersive X-ray analysis revealed the presence of the element oxygen. Dry oxidation enhanced the surface roughness and surface-active area of the samples. Al2O3 contributed to the low leakage current of the Pt Schottky contact of the AlN/GaN/AlN/Si(111) substrate. The Al2O3 layer acted as an insulator layer, and retarded the current flow of devices.
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来源期刊
Makara Journal of Science
Makara Journal of Science MULTIDISCIPLINARY SCIENCES-
CiteScore
1.30
自引率
20.00%
发文量
24
审稿时长
24 weeks
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