基于绝缘金属衬底的SiC JFET电机驱动传导电磁干扰的建模与降低

X. Gong, J. Ferreira
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引用次数: 6

摘要

本文介绍了一种在绝缘金属衬底(IMS)上附加离散碳化硅(SiC) jfet的电机驱动逆变器中传导共模(CM)电磁干扰(EMI)的抑制。在相似的电路布局下,比较了IMS逆变器与散热器逆变器的电磁兼容性能。两者都受到SiC JFET漏极和衬底基板之间寄生耦合的相同影响。研究发现,尽管传统CM滤波器在低频(LF)范围内有效地抑制了发射噪声,但电容耦合的影响对中频(MF)和高频(HF)范围的发射噪声有轻微的改善或没有改善。针对这一问题,提出了一种提取寄生参数的系统CM等效电路模型。该模型能够评估宽传导EMI频带上的滤波器插入损耗,这对于实现性能和成本之间的优化滤波器设计至关重要。给出的实验和计算结果构成了有效抑制产生的电磁干扰的逐步指南,以符合IEC61800-3 C2: Qp规定的标准。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modeling and reduction of conducted EMI in SiC JFET motor drives with insulated metal substrate
This paper presents the suppression of conducted common mode (CM) Electromagnetic Interference (EMI) in an inverter for motor drive with discrete Silicon Carbide (SiC) JFETs attached on top of the Insulated Metal Substrate (IMS). The EMC performance of the IMS inverter is compared with a heat sink inverter in a similar circuit layout. Both are under the same influence of parasitic couplings between the SiC JFET drains and substrate base plate. It is found that although the application of conventional CM filters effectively suppresses the emitted noise in the low frequency (LF) range, the capacitive coupling influence results in slight or no improvement in the middle frequency (MF) and high frequency (HF) range. To deal with this problem, a system CM equivalent circuit model with extracted parasitic parameters is proposed. The model is able to evaluate the filter insertion losses over a broad conducted EMI frequency band, which is essential to achieve an optimized filter design balanced between performance and cost. The presented experimental and calculated results form the step-by-step guideline that effectively suppresses the generated EMI to comply with the standard prescribed by IEC61800-3 C2: Qp.
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