热蒸发法制备镉掺杂ZnTe薄膜的结构、电学和传感性能

Raghda M.A, Firas A. Najim
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引用次数: 0

摘要

本研究主要研究了热蒸发法制备的ZnTe薄膜的功能、电学和传感质量,该薄膜的厚度为300 nm,沉积在玻璃基上,然后在350℃的温度下退火。研究了7%镉掺杂对掺杂膜结构、电学和传感性能的影响。XRD结果表明,纯膜和掺杂膜均为多晶和立方结构。根据本研究的电学性质发现,比电阻随温度的升高而降低。发现掺杂和退火后ZnTe薄膜的灵敏度提高,因此计算了灵敏度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Structural, Electrical and Sensing properties of Cd-doped ZnTe thin films, prepared by thermal evaporation method
This study concentrates on the examination of the functional, electrical, and sensing qualities of ZnTe thin films that were prepared by the thermal evaporation method, with a thickness of 300 nm deposited on glass bases prior to annealing at a temperature of (350ºC). The influence of doping with cadmium (7%) on the structural, electrical, and sensing properties of dopant films was also investigated. The results of XRD showed that the pure and doped films were polycrystalline and cubic. According to the findings of the electrical properties of this study, the specific resistance decreases with increasing temperature. It was found that the sensitivity of ZnTe films rises upon doping and annealing, so the sensitivity was calculated.
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