包含量子效应的三栅极mosfet中反转电荷质心的建模

2013 International Conference on Emerging Trends in VLSI, Embedded System, Nano Electronics and Telecommunication System (ICEVENT) Pub Date : 2013-04-11 DOI:10.1109/ICEVENT.2013.6496577

P. Vimala, N. Balamurugan

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引用次数: 0

摘要

本文提出了考虑量子效应的三栅极(TG)金属氧化物半导体场效应晶体管(mosfet)的反转电荷质心分析模型。为了得到TG mosfet的QM效应，采用变分方法求解了耦合泊松方程和薛定谔方程。该模型的建立是为了提供反转电荷分布函数(ICDF)的解析表达式。所得的ICDF用于反演电荷质心的计算。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Modeling the inversion charge centroid in Tri-Gate MOSFETs including quantum effects

In this paper, inversion charge centroid analytical model for Tri-Gate (TG) metal-oxide- semiconductor field effect transistors (MOSFETs) considering quantum effects is presented. To obtain the QM effects of TG MOSFETs, the coupled Poisson and Schrodinger equations are solved using variational approach. This model is developed to provide an analytical expression for inversion charge distribution function (ICDF). The obtained ICDF is used to calculate the inversion charge centroid.

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来源期刊

2013 International Conference on Emerging Trends in VLSI, Embedded System, Nano Electronics and Telecommunication System (ICEVENT)

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