反δ掺杂改进InP太阳能电池

Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) Pub Date : 1994-12-05 DOI:10.1109/WCPEC.1994.520657

J. Piprek, K. W. Boer

{"title":"反δ掺杂改进InP太阳能电池","authors":"J. Piprek, K. W. Boer","doi":"10.1109/WCPEC.1994.520657","DOIUrl":null,"url":null,"abstract":"Recombination loss mechanisms in InP homojunction solar cells are analyzed using numerical modeling. To reduce the junction leakage current, it is proposed to introduce a thin undoped layer with low recombination center density near the pn-junction. This inverse delta-doping is found to be most beneficial in low efficiency p/sup +/n-InP cells, improving the open circuit voltage by 50 mV, the fill factor by 0.09, and the efficiency by 2 percentage points.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"InP solar cell improvement by inverse delta-doping\",\"authors\":\"J. Piprek, K. W. Boer\",\"doi\":\"10.1109/WCPEC.1994.520657\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recombination loss mechanisms in InP homojunction solar cells are analyzed using numerical modeling. To reduce the junction leakage current, it is proposed to introduce a thin undoped layer with low recombination center density near the pn-junction. This inverse delta-doping is found to be most beneficial in low efficiency p/sup +/n-InP cells, improving the open circuit voltage by 50 mV, the fill factor by 0.09, and the efficiency by 2 percentage points.\",\"PeriodicalId\":20517,\"journal\":{\"name\":\"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WCPEC.1994.520657\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WCPEC.1994.520657","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用数值模拟方法分析了InP同结太阳能电池的复合损耗机理。为了减小结漏电流，提出在pn结附近引入低复合中心密度的薄无掺杂层。在低效率的p/sup +/n-InP电池中，发现逆δ掺杂最有利，将开路电压提高50 mV，填充系数提高0.09，效率提高2个百分点。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

InP solar cell improvement by inverse delta-doping

Recombination loss mechanisms in InP homojunction solar cells are analyzed using numerical modeling. To reduce the junction leakage current, it is proposed to introduce a thin undoped layer with low recombination center density near the pn-junction. This inverse delta-doping is found to be most beneficial in low efficiency p/sup +/n-InP cells, improving the open circuit voltage by 50 mV, the fill factor by 0.09, and the efficiency by 2 percentage points.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)

自引率

0.00%

发文量