半导体中的非线性光学与多量子阱

T. Dekorsy, G. Segschneider, A. Kim, S. Hunsche, H. Kurz
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引用次数: 5

摘要

量子阱中电子和空穴的限制允许制造出与激子跃迁相关的增强非线性光学效应的结构。通过应用飞秒光谱学,可以以高时间分辨率研究这些系统的相干和非相干特性,从而在亚皮秒时间尺度上详细了解光子、电子和晶格相互作用的过程。我们提出了由弛豫和热化动力学控制的非线性光学行为在多量子阱和低温生长的砷化镓的研究。具有高时间和能量分辨率的实验提供了量子阱中价带间热化和低温生长GaAs中浅界缺陷能级影响的详细见解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Nonlinear optics in semiconductors and multiple quantum wells
The confinement of electrons and holes in quantum wells allows the fabrication of structures exhibiting enhanced nonlinear optical effects associated with excitonic transitions. By applying femtosecond spectroscopy, it has become possible to study the coherent and incoherent properties of these systems with high temporal resolution, thus gaining a detailed insight into the processes involved in the interactions of photons, electrons and the crystal lattice on a subpicosecond time scale. We present investigations of the nonlinear optical behaviour governed by the relaxation and thermalization dynamics in multiple quantum wells and in low-temperature grown GaAs. Experiments with high temporal and energetic resolution provide a detailed insight into the inter-valence-band thermalization in quantum wells and the influence of shallow bound defect levels in low-temperature grown GaAs.
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