1.5 μ m波长应变层InGaAs/InGaAsP SIPBH激光器的高功率和高温工作

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147332

P. Thijs, J. Binsma, E. Young, W.M.E. van Gils

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引用次数: 4

摘要

结果表明，压缩应变量子阱和拉伸应变量子阱都可以获得高性能激光器。除了低阈值电流(密度)和高功率工作外，拉伸应变多量子阱半绝缘平面埋地异质结构(MQW SIPBH)激光器还显示出优异的高温工作性能(高达140摄氏度)。压缩应变MQW SIPBH激光器在创记录的低阈值电流(0.8 mA)和创记录的高输出功率(325 mW)下工作连续波。结果表明，应变和量子约束都引起了能带结构的改变。以及半绝缘InP的有效电流约束，产生了非常高性能的应变层MQW-SIPBH激光器。

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High power and high temperature operation of 1.5 mu m wavelength strained-layer InGaAs/InGaAsP SIPBH lasers

It is demonstrated that high performance lasers can be obtained not only with compressively strained quantum wells (QWs) but also with tensile strained QWs. In addition to low threshold current (density) and high power operation, the tensile strained multiple quantum well semi-insulating planar buried heterostructure (MQW SIPBH) lasers show excellent high temperature operation (up to 140 degrees C). Compressively strained MQW SIPBH lasers are found to operate CW at record low threshold current values (0.8 mA) and record high output power (325 mW). It is concluded that both the band structure modifications induced by the strain and the quantum confinement. as well as the effective current confinement by means of semi-insulating InP, result in very high performance strained-layer MQW-SIPBH lasers.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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