Charge-density-wave phase transitions in quasi-2D 1T-TaS2/h-BN heterostructure devices

In this invited contribution, we review recent results and report on the phase transitions and de-pinning of the charge-density waves in single-crystal 1T-TaS2 thin-film and 1T-TaS2 / h-BN heterostructure devices. It is known that 1T-TaS2 reveals charge-density-wave phases below and above room temperature. The de-pinning of the charge-density waves in the quasi-2D materials is different from that in “conventional” bulk charge-density-wave materials with quasi-1D motifs in the crystal structure. The de-pinning process in 1T-TaS2 is not accompanied by an observable abrupt increase in electric current – in contrast to de-pinning in the conventional charge-density-wave materials with the quasi-1D crystal structure. The obtained results contribute to the development of the charge-density-wave devices for applications in electronics and optoelectronics.