快速瞬态响应的22nm CMOS变化自适应集成计算数字LDO

K. Z. Ahmed, H. Krishnamurthy, C. Augustine, Xiaosen Liu, Sheldon Weng, K. Ravichandran, J. Tschanz, V. De
{"title":"快速瞬态响应的22nm CMOS变化自适应集成计算数字LDO","authors":"K. Z. Ahmed, H. Krishnamurthy, C. Augustine, Xiaosen Liu, Sheldon Weng, K. Ravichandran, J. Tschanz, V. De","doi":"10.23919/VLSIC.2019.8778070","DOIUrl":null,"url":null,"abstract":"A variation-adaptive computational digital low-dropout regulator (DLDO) uses an event-driven computational controller (CC) to compute the required number of power gates to regulate the output voltage for any load/reference transient. The self-calibrated CC ensures a 2-asynchronous-event-cycle settling time independent of the load/VREF range. Measurements of a 22nm CMOS testchip demonstrate >20X faster settling time and >6X lower droop magnitude than a conventional linear controller (LC) based LDO.","PeriodicalId":6707,"journal":{"name":"2019 Symposium on VLSI Circuits","volume":"19 1","pages":"C124-C125"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A Variation-Adaptive Integrated Computational Digital LDO in 22nm CMOS with Fast Transient Response\",\"authors\":\"K. Z. Ahmed, H. Krishnamurthy, C. Augustine, Xiaosen Liu, Sheldon Weng, K. Ravichandran, J. Tschanz, V. De\",\"doi\":\"10.23919/VLSIC.2019.8778070\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A variation-adaptive computational digital low-dropout regulator (DLDO) uses an event-driven computational controller (CC) to compute the required number of power gates to regulate the output voltage for any load/reference transient. The self-calibrated CC ensures a 2-asynchronous-event-cycle settling time independent of the load/VREF range. Measurements of a 22nm CMOS testchip demonstrate >20X faster settling time and >6X lower droop magnitude than a conventional linear controller (LC) based LDO.\",\"PeriodicalId\":6707,\"journal\":{\"name\":\"2019 Symposium on VLSI Circuits\",\"volume\":\"19 1\",\"pages\":\"C124-C125\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 Symposium on VLSI Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/VLSIC.2019.8778070\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSIC.2019.8778070","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

摘要

变化自适应计算数字低差调节器(DLDO)使用事件驱动的计算控制器(CC)来计算所需的功率门数来调节任何负载/参考瞬态的输出电压。自校准CC确保独立于负载/VREF范围的2个异步事件周期的稳定时间。22nm CMOS测试芯片的测量结果表明,与基于传统线性控制器(LC)的LDO相比,稳定时间快了20倍,下垂幅度低了6倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Variation-Adaptive Integrated Computational Digital LDO in 22nm CMOS with Fast Transient Response
A variation-adaptive computational digital low-dropout regulator (DLDO) uses an event-driven computational controller (CC) to compute the required number of power gates to regulate the output voltage for any load/reference transient. The self-calibrated CC ensures a 2-asynchronous-event-cycle settling time independent of the load/VREF range. Measurements of a 22nm CMOS testchip demonstrate >20X faster settling time and >6X lower droop magnitude than a conventional linear controller (LC) based LDO.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信