高速InGaAs HBT器件和电路

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147343

B. Jalali, R. Nottenburg, M. Banu, R. Montgomery, A. Levi, M. Panish, A. Cho

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引用次数: 4

摘要

综述了InGaAs异质结构双极晶体管(HBT)技术在高速电子器件中的应用。本文讨论了Al/sub 0.48/In/sub 0.52/As-In/sub 0.53/Ga/sub 0.47/As和InP-In/sub 0.53/Ga/sub 0.47/As异质结构系统的性能。描述了与光波通信技术相关的高速低功耗集成电路的实例。

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High speed InGaAs HBT devices and circuits

An overview of the InGaAs heterostructure bipolar transistor (HBT) technology for applications in high speed electronics is presented. Properties of both Al/sub 0.48/In/sub 0.52/As-In/sub 0.53/Ga/sub 0.47/As and InP-In/sub 0.53/Ga/sub 0.47/As heterostructure systems, important for integrated circuit applications are discussed. Examples of high speed and low power integrated circuits that are relevant for lightwave communication technology are described.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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