温度和mosfet器件尺寸对CMOS逆变器直流特性的影响

A. Ruangphanit, Kunagone Kiddee, A. Poyai, Y. Wongprasert, S. Niemcharoen, R. Muanghlua
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引用次数: 4

摘要

CMOS制造技术要求在同一衬底上构建n沟道(NMOS)和p沟道(PMOS)晶体管。为了保证电路性能在温度范围内的可靠性,电路的设计必须适应参数的基本变化。研究了温度对MOSFET参数的依赖关系,以及在27 ~ 125℃温度范围内工作的亚微米CMOS逆变器直流特性的小尺寸影响。结果表明,两种器件的阈值电压温度系数(TCV)均随通道宽度的减小而增大。由于埋置信道器件,PMOS比NMOS的影响更大。逆变器的电压转移特性(VTC)显示WR为2.0时的对称栅极。然而,窄通道效应、阈值电压匹配和比电阻是CMOS逆变器工作的关键问题。最后,这些结果将支持工艺工程师,电路设计师在下一次制造中提高器件性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The effects of temperature and device demension of MOSFETs on the DC characteristics of CMOS inverter
The CMOS fabrication technology requires both n-channel (NMOS) and p-channel (PMOS) transistors be built on the same substrate. To ensure the reliability of the circuit performance over the temperature range, the circuits must be designed accommodate the basic variations parameters as a function of parameter. The temperature dependence of the MOSFET parameters as well as the small dimension effects on the dc characteristics of submicrometer CMOS inverters operated over the temperature range of 27- 125 degree Celsius are presented. The results show that the threshold voltage temperature coefficient (TCV) of both devices increased as the channel width decreased. PMOS has a larger affect more than NMOS because of a buried channel device. The Voltage Transfer Characteristics (VTC) of an inverter shows a symmetrical gate at WR is 2.0. However, the narrow channel effect, threshold voltage matching and ratio BR are key problem of CMOS inverter worked. Finally, these results will support the process engineer, circuit designer to improve device performance in the next fabrication.
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