亚微米SiGe HBT晶体管的二维数值模拟

S. Latreche, N. Kherief, M. Lakhdara
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引用次数: 0

摘要

本文研究了硅锗异质结双极晶体管(SiGe HBT)的数值模拟方法。为此,我们考虑了三种模型:所谓的漂移扩散模型(DDM),等温能量平衡模型(EB)和非等温能量平衡模型(NEB)。考虑的器件对应于BiCMOS6G 0.35pm工业流程,专用于射频应用。数值器件建模考虑了技术CAD (TCAD)仿真。DDM模型描述了半导体器件中的经典输运。能量平衡模型描述了能量的传递。该模型与热离子发射输运相耦合。NEB模型允许考虑载体温度的非均匀分布。给出了三种模型的电流-张力曲线、Gummel曲线和截止频率等典型数值结果。对于亚微米器件,显然有必要考虑热离子发射和载流子的不均匀分布等现象。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Two-dimensional numerical modeling of sub micrometer SiGe HBT transistors
This paper presents an investigation of numerical modeling of SiGe HBT (Silicon-Germanium heterojunction Bipolar Transistor). For this, we consider three models: the so called Drift Diffusion Model (DDM), the Isothermal Energy Balance model (EB) and the Non-Isothermal Energy Balance model (NEB). The considered devices correspond to the BiCMOS6G 0.35pm industrial processes and are dedicated to radiofrequency applications. The numerical device modeling considers Technology CAD (TCAD) simulation. The DDM model describes the classical transport in semiconductor devices. The energy balance model describes the energy transport. This model is coupled with thermionic emission transport. The NEB model permits to take into account the non-uniform distribution of the carrier's temperature. Some typical numerical results are presented such as the current-tension curve, Gummel curves and cutoff frequency for the three models. For submicron devices, it is clear that it is necessary to take into account the phenomena such as thermionic emission and the non-uniform distribution of the carriers.
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