{"title":"晶格变形对二硫化钼单层电子结构的影响","authors":"A. Krivosheeva, V. Shaposhnikov, V. Borisenko","doi":"10.29235/1561-8323-2021-65-1-40-45","DOIUrl":null,"url":null,"abstract":"The possibilities and conditions for modifying the band gap and the behavior of interband transitions under compressive and tensile strains in the crystal lattice of a molybdenum disulfide monolayer have been determined by theoretical modeling. It is shown that depending on the value and direction of the strains the compound may be a direct-gap or indirect-gap semiconductor, and the conditions for such transformations are determined. The results demonstrate a potential use of the molybdenum disulfide monolayer in nanoelectronic devices of new generation in which controlled transport of charge carriers is possible","PeriodicalId":11227,"journal":{"name":"Doklady Akademii nauk","volume":"4 1","pages":"40-45"},"PeriodicalIF":0.0000,"publicationDate":"2021-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of lattice deformations on the electronic structure of the molybdenum disulfide monolayer\",\"authors\":\"A. Krivosheeva, V. Shaposhnikov, V. Borisenko\",\"doi\":\"10.29235/1561-8323-2021-65-1-40-45\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The possibilities and conditions for modifying the band gap and the behavior of interband transitions under compressive and tensile strains in the crystal lattice of a molybdenum disulfide monolayer have been determined by theoretical modeling. It is shown that depending on the value and direction of the strains the compound may be a direct-gap or indirect-gap semiconductor, and the conditions for such transformations are determined. The results demonstrate a potential use of the molybdenum disulfide monolayer in nanoelectronic devices of new generation in which controlled transport of charge carriers is possible\",\"PeriodicalId\":11227,\"journal\":{\"name\":\"Doklady Akademii nauk\",\"volume\":\"4 1\",\"pages\":\"40-45\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-02-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Doklady Akademii nauk\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.29235/1561-8323-2021-65-1-40-45\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Doklady Akademii nauk","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.29235/1561-8323-2021-65-1-40-45","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Influence of lattice deformations on the electronic structure of the molybdenum disulfide monolayer
The possibilities and conditions for modifying the band gap and the behavior of interband transitions under compressive and tensile strains in the crystal lattice of a molybdenum disulfide monolayer have been determined by theoretical modeling. It is shown that depending on the value and direction of the strains the compound may be a direct-gap or indirect-gap semiconductor, and the conditions for such transformations are determined. The results demonstrate a potential use of the molybdenum disulfide monolayer in nanoelectronic devices of new generation in which controlled transport of charge carriers is possible
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