PC光刻中面漆变化引起的系统性缺失缺陷:检测方法串联使用的案例研究

M. Fields, R. V. Roijen, M. Lucksinger
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引用次数: 0

摘要

对于最近在32nm工艺中栅极光刻的面涂层变化,发现新创建的焦点条件导致错误方向栅极结构上的系统性缺失。为了找到正确的焦点条件,必须同时使用几次检查。其中包括焦距曝光矩阵测量,以评估不同焦距下感兴趣的结构,过程窗口中心检查,以发现焦点变化的一般影响,以及自动过程检查,以确保不同焦距下感兴趣的结构的一致性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Systematic Missing Pattern Defects Introduced by Topcoat Change at PC Lithography: A Case Study in the Tandem Usage of Inspection Methods
For a recent topcoat change at gate lithography in the 32nm technology, it was found that the newly created focus condition caused systematic missing pattern on wrong-way gate structures. To find the correct focus condition, several inspections had to be used in tandem. These included focus exposure matrix measurements to evaluate the structures of interest at varying focus, process window centering inspections to find general impact of focus changes, and automatic process inspections to ensure consistency of the structures of interest with varying focus.
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