透明触点光电探测器的电学特性

2012 9th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology Pub Date : 2012-05-16 DOI:10.1109/ECTICON.2012.6254203

I. Srithanachai, S. Ueamanapong, B. Nararug, S. Niemchaoren

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引用次数: 0

摘要

研究了退火处理对氧化铟锡(ITO)薄膜结构性能的影响。采用射频溅射系统，在100w下对ITO薄膜进行退火以提高薄膜质量。在室温下，将不同厚度的样品沉积在未加热的玻片上。分别在200、300、400和500℃的纯氮气氛中退火15 min。研究了氮流对ITO薄膜性能的影响。能量色散x射线(EDX)分析表明，ITO薄膜中含有O、Sn和In。通过扫描电镜(SEM)观察热处理对表面粗糙度和沉积膜结构的影响，发现退火后ITO薄膜晶粒尺寸增大，紫外可见光谱(UV-vis)透射率增大，退火后电阻率从9 ω -cm下降到1 ω -cm。

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Electrical characteristics of photodetector with transparent contact

The influence of annealing treatment on structure properties of the indium tin oxide (ITO) films has been investigated. ITO films annealed to improve quality films were prepared by RF sputtering system at 100 W. The samples at different thicknesses were deposited on non-heated glass slide at room temperature. Annealing temperature in pure nitrogen atmosphere for 15 minutes was varied at 200, 300, 400 and 500°C, respectively. Effect of nitrogen flow on properties of ITO films has been studied. It has been observed that the energy dispersive x-ray (EDX) analysis showed O, Sn and In content in the ITO films. The effect of thermal annealing on roughness of the surface and on the structure of deposited film was observed by scanning electron microscopy (SEM) that grain size increases, the transmission of ITO thin films increases after annealing by UV-vis spectroscopy and the resistivity decreases after annealed from 9 to 1 ohm-cm.

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来源期刊

2012 9th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology

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