超结硅和宽禁带SiC和GaN功率场效应管变换器ZVS条件分析的新方面

2014 16th European Conference on Power Electronics and Applications Pub Date : 2014-09-29 DOI:10.1109/EPE.2014.6911047

R. Miftakhutdinov

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引用次数: 11

摘要

本文分析了采用超结硅、碳化硅和氮化镓技术的场效应管与传统硅工艺的损耗特性差异，并提出了功率损耗优化的新实用模型。这些模型应用于推导标准化的ZVS条件和边界，用于流行的PWM ZVS拓扑，允许在宽工作条件下进行效率优化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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New aspects on analyzing ZVS conditions for converters using super-junction Si and wide bandgap SiC and GaN power FETs

Paper analyzes substantial Coss behavior differences of FETs using super-junction Si, SiC and GaN technologies versus traditional Si process and suggests new practical models for power losses optimization. These models applied to derive normalized ZVS conditions and boundaries for popular PWM ZVS topologies allowing efficiency optimization at wide operating conditions.

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2014 16th European Conference on Power Electronics and Applications

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