由B、N、Ge和Sn原子构成的小帽(5,0)之字形碳纳米管的电学和光学性质:DFT理论计算

IF 1.2 Q4 NANOSCIENCE & NANOTECHNOLOGY
M. Kamalian, A. Abbasi, Y. S. Jalili
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引用次数: 1

摘要

本研究采用DFT计算方法研究了B、N、Ge和Sn等原子对(5,0)之字形碳纳米管光学和电学性能的影响。这些元素附着在碳纳米管的一端。我们考虑了四种不同的结构设计作为p-n结器件的可能候选。利用量子化学信息分析研究了这些结构的电学性质,得到了这些结构的能带隙、偶极矩、电荷和DOS。进一步的TD-DFT计算得到了结构设计的光学性质,以研究电子迁移率,表明以Sn结尾的碳纳米管具有更高的导电性和更高的整流电压。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrical and optical properties of a small capped (5, 0) zigzag Carbon nanotube by B, N, Ge and Sn atoms: DFT theoretical calculation
In this study we investigate the effect of atoms such as B, N, Ge and Sn on the optical and the electrical properties of capped (5, 0) zigzag carbon nanotube, using DFT calculation method. These elements were attached to the one end of the carbon nanotube. We considered four different structure designs as possible candidates for a p-n junction device. The electrical properties of these structures were investigated using the quantum chemical information analysis which leads to the energy band gap, dipole moments, electrical charges and the DOS of these structures. Further TD-DFT calculations were performed to obtain the optical properties of the structure designs to investigate the electron mobility, indicating higher conductivity and higher rectifying voltage in the CNT terminated by Sn.
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来源期刊
international journal of nano dimension
international journal of nano dimension NANOSCIENCE & NANOTECHNOLOGY-
CiteScore
2.80
自引率
20.00%
发文量
0
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