用超短激光脉冲刻蚀氧化物半导体

2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003) (IEEE Cat. No.03TH8666) Pub Date : 2003-06-22 DOI:10.1109/CLEOE.2003.1313642

D. Ruthe, K. Zimmer

{"title":"用超短激光脉冲刻蚀氧化物半导体","authors":"D. Ruthe, K. Zimmer","doi":"10.1109/CLEOE.2003.1313642","DOIUrl":null,"url":null,"abstract":"In this paper the etching and structuring of zinc oxide, indium tin oxide by ultrashort laser pulses is analysed. A Ti:sapphire laser, which provides 120 fs pulses at a wavelength of 775 nm, was used to etch the samples at room temperature in air as well as in vacuum. The surface topography of the etched semiconductors has been investigated.","PeriodicalId":6370,"journal":{"name":"2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003) (IEEE Cat. No.03TH8666)","volume":"8 11","pages":"580-"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Etching of oxide semiconductors by ultrashort laser pulses\",\"authors\":\"D. Ruthe, K. Zimmer\",\"doi\":\"10.1109/CLEOE.2003.1313642\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper the etching and structuring of zinc oxide, indium tin oxide by ultrashort laser pulses is analysed. A Ti:sapphire laser, which provides 120 fs pulses at a wavelength of 775 nm, was used to etch the samples at room temperature in air as well as in vacuum. The surface topography of the etched semiconductors has been investigated.\",\"PeriodicalId\":6370,\"journal\":{\"name\":\"2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003) (IEEE Cat. No.03TH8666)\",\"volume\":\"8 11\",\"pages\":\"580-\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003) (IEEE Cat. No.03TH8666)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CLEOE.2003.1313642\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003) (IEEE Cat. No.03TH8666)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CLEOE.2003.1313642","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文分析了超短激光脉冲对氧化锌、氧化铟锡的刻蚀和结构的影响。采用Ti:蓝宝石激光器，在775 nm波长下提供120fs脉冲，在室温和真空条件下对样品进行蚀刻。对蚀刻半导体的表面形貌进行了研究。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Etching of oxide semiconductors by ultrashort laser pulses

In this paper the etching and structuring of zinc oxide, indium tin oxide by ultrashort laser pulses is analysed. A Ti:sapphire laser, which provides 120 fs pulses at a wavelength of 775 nm, was used to etch the samples at room temperature in air as well as in vacuum. The surface topography of the etched semiconductors has been investigated.

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2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003) (IEEE Cat. No.03TH8666)

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