一种76dBΩ 1.7GHz 0.18µm CMOS可调跨阻放大器,采用宽带电流前置放大器,用于高频横向微机械振荡器

H. M. Lavasani, W. Pan, B. Harrington, R. Abdolvand, F. Ayazi
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引用次数: 25

摘要

参考频率振荡器是现代无线电收发器的关键器件。目前,现代收发器依赖于片外低频(≪100MHz)石英晶体参考振荡器[1]。硅微机械振荡器是石英晶体振荡器的合适替代品,因为它们体积小,频率高,与ic集成的潜力[2]-[4]。在多千兆赫应用中,大的上转换比限制了射频前端的性能。此外,基于ofdm的3G/4G标准具有严格的误差矢量幅度(EVM)规范[5],要求低相位噪声底限,对于低频谐振槽,只有通过减少锁相环中低通滤波器的3db带宽(BW)才能实现。小的BW增加了滤波器的尺寸,因此,使合成器在单个芯片中的集成变得复杂。然而,最近微加工技术的进步使得后cmos兼容超高频微机械振荡器的实现成为可能[3],[4]。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 76dBΩ 1.7GHz 0.18µm CMOS tunable transimpedance amplifier using broadband current pre-amplifier for high frequency lateral micromechanical oscillators
The frequency reference oscillator is a pivotal block in modern radio transceivers. Currently, modern transceivers rely on off-chip low frequency (≪100MHz) quartz crystal reference oscillators [1]. Silicon micromechanical oscillators are suitable alternative to quartz crystal oscillators due to their small form-factor, higher frequency, and integration potential with ICs [2]–[4]. In multi-gigahertz applications, large up-conversion ratio of synthesizers limits the performance of RF front-end. In addition, OFDM-based 3G/4G standards with stringent error vector magnitude (EVM) specification [5] demand a low phase-noise floor that for low frequency resonating tanks is only possible by reducing the 3-dB bandwidth (BW) of the low pass filter in the PLL. The small BW increases the size of filter and hence, complicates the integration of the synthesizer in a single chip. However, recent advances in micromachining technology have made the realization of post-CMOS-compatible UHF micromechanical oscillators possible [3], [4].
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