用于红外传感器应用的10k NbN ADC

D. Durand , B. Dalrymple , L. Eaton , J. Spargo , M. Wire , M. Dowdy , M. Ressler
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引用次数: 2

摘要

本文报道了一种工作在9 ~ 10 K的12位NbN SFQ计数a /D转换器的设计、制造和测试结果,并将其插入红外焦平面阵列传感器系统中。NbN集成电路基于线性化的SQUID前端,它以与信号成比例的频率产生SFQ脉冲。一个门控SFQ计数器在采样时间内集成信号,数据通过串行锁存电压状态逻辑(MVTL)输出移位寄存器被驱动出芯片。TRW A/D转换器芯片已被封装并插入NASA喷气推进实验室的红外焦平面阵列传感器测试设备或测试台。整个系统已经成功地演示了以100帧/秒的速度产生红外图像,NbN A/D转换器工作在9 K,功耗为0.3 mW。讨论了A/D转换芯片的性能,包括磁屏蔽和中高速信号I/O的封装,以及集成测试台系统。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
10 K NbN ADC for IR sensor applications

The authors report the design, fabrication and test results of a 12-bit NbN SFQ counting A/D converter operating at 9 to 10 K and its insertion into a test IR focal plane array sensor system. The NbN IC is based on a linearized SQUID front-end which generates SFQ pulses at a frequency proportional to the signal. A gated SFQ counter integrates the signal over the sample time and the data is driven off chip through a serializing latching voltage state logic (MVTL) output shift register. The TRW A/D converter chip has been packaged and inserted into an IR focal plane array sensor test facility, or test bed, at the NASA Jet Propulsion Laboratory. The entire system has been successfully demonstrated producing IR images at 100 frames/s with the NbN A/D converter operating at 9 K, dissipating 0.3 mW. Performance of the A/D converter chip, the package including magnetic shielding and medium/high speed signal I/O, and the integrated test bed system are discussed.

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