5-10 kVA变换器中igbt传导EMI性能的实验与仿真研究

F. Klotz, J. Petzoldt, H. Volker
{"title":"5-10 kVA变换器中igbt传导EMI性能的实验与仿真研究","authors":"F. Klotz, J. Petzoldt, H. Volker","doi":"10.1109/PESC.1996.550111","DOIUrl":null,"url":null,"abstract":"Power switches with high dv/dt and di/dt rates like IGBTs are the source of EMI. The paper presents investigations of conducted EMI on IGBTs in different test circuits. Moreover, results are explained from a special developed model for prediction of common and differential mode interferences, that is suitable to determine solutions for a better EMC through other design around the semiconductor chip. Results and further possibilities are discussed.","PeriodicalId":19979,"journal":{"name":"PESC Record. 27th Annual IEEE Power Electronics Specialists Conference","volume":"2010 335","pages":"1986-1991 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"1996-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"Experimental and simulative investigations of conducted EMI performance of IGBTs for 5-10 kVA converters\",\"authors\":\"F. Klotz, J. Petzoldt, H. Volker\",\"doi\":\"10.1109/PESC.1996.550111\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Power switches with high dv/dt and di/dt rates like IGBTs are the source of EMI. The paper presents investigations of conducted EMI on IGBTs in different test circuits. Moreover, results are explained from a special developed model for prediction of common and differential mode interferences, that is suitable to determine solutions for a better EMC through other design around the semiconductor chip. Results and further possibilities are discussed.\",\"PeriodicalId\":19979,\"journal\":{\"name\":\"PESC Record. 27th Annual IEEE Power Electronics Specialists Conference\",\"volume\":\"2010 335\",\"pages\":\"1986-1991 vol.2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-06-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"PESC Record. 27th Annual IEEE Power Electronics Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PESC.1996.550111\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"PESC Record. 27th Annual IEEE Power Electronics Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PESC.1996.550111","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15

摘要

像igbt这样具有高dv/dt和di/dt速率的电源开关是EMI的来源。本文研究了不同测试电路对igbt的传导电磁干扰。此外,还从一个特殊的共模和差模干扰预测模型解释了结果,该模型适用于通过围绕半导体芯片的其他设计来确定更好的EMC解决方案。讨论了结果和进一步的可能性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Experimental and simulative investigations of conducted EMI performance of IGBTs for 5-10 kVA converters
Power switches with high dv/dt and di/dt rates like IGBTs are the source of EMI. The paper presents investigations of conducted EMI on IGBTs in different test circuits. Moreover, results are explained from a special developed model for prediction of common and differential mode interferences, that is suitable to determine solutions for a better EMC through other design around the semiconductor chip. Results and further possibilities are discussed.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信