修正以下三篇关于使用BEB模型计算含有第三和第四排原子的分子的电子冲击电离效率曲线的论文

C. Vallance, P. W. Harland
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引用次数: 5

摘要

CH3X的绝对电子冲击电离截面,其中X = H, F, Cl, Br, I。B:。[j] .物理学报,2004,24(2):444 - 444。B:。[j] .物理学报,2004,30(3):335 - 339。B:。我们最近重新检查了一些已发表的关于卤化烃和含硫分子的电子碰撞电离截面的二元碰撞bethe (BEB)计算,并发现了与我们早期结果的差异。详情请参阅PDF文件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Corrections to the following three papers pertaining to electron impact ionization efficiency curves calculated using the BEB model for molecules containing third and fourth row atoms
Absolute electron impact ionization cross sections for CH3X, where X = H, F, Cl, Br, and I Claire Vallance et al 1997 J. Phys. B: At. Mol. Opt. Phys. 30 2465–2475 Absolute electron-impact ionization cross sections for a range of C1 to C5 chlorocarbons James E Hudson et al 2001 J. Phys. B: At. Mol. Opt. Phys. 34 3025–3039 Absolute electron impact ionization cross-sections for CO, CO2, OCS and CS2 James E Hudson et al 2004 J. Phys. B: At. Mol. Opt. Phys. 37 445–455 We have recently re-examined some published binary-encounter–Bethe (BEB) calculations on the electron impact ionization cross sections for halogenated hydrocarbons and sulfur-containing molecules, and found a discrepancy with our earlier results. Please see the PDF file for full details.
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