SAW用金刚石片

1997 IEEE Ultrasonics Symposium Proceedings. An International Symposium (Cat. No.97CH36118) Pub Date : 1997-10-05 DOI:10.1109/ULTSYM.1997.663006

S. Fujii, Y. Seki, K. Yoshida, H. Nakahata, K. Higaki, H. Kitabayashi, S. Shikata

{"title":"SAW用金刚石片","authors":"S. Fujii, Y. Seki, K. Yoshida, H. Nakahata, K. Higaki, H. Kitabayashi, S. Shikata","doi":"10.1109/ULTSYM.1997.663006","DOIUrl":null,"url":null,"abstract":"A three inch wafer of polycrystalline diamond on silicon has been successfully developed. High uniformity of quality of diamond and almost defect free diamond surface associated with high quality ZnO exhibit wonderful performance of diamond SAW devices. It was also observed that this material system has super high power handling capability, smaller temperature deviation compared with 36 Y cut and ST cut quartz, low phase slope characteristics in the passband, and extremely high breakdown voltage. A variety of applications are expected with the material system utilizing these features.","PeriodicalId":6369,"journal":{"name":"1997 IEEE Ultrasonics Symposium Proceedings. An International Symposium (Cat. No.97CH36118)","volume":"14 10","pages":"183-186 vol.1"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Diamond wafer for SAW application\",\"authors\":\"S. Fujii, Y. Seki, K. Yoshida, H. Nakahata, K. Higaki, H. Kitabayashi, S. Shikata\",\"doi\":\"10.1109/ULTSYM.1997.663006\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A three inch wafer of polycrystalline diamond on silicon has been successfully developed. High uniformity of quality of diamond and almost defect free diamond surface associated with high quality ZnO exhibit wonderful performance of diamond SAW devices. It was also observed that this material system has super high power handling capability, smaller temperature deviation compared with 36 Y cut and ST cut quartz, low phase slope characteristics in the passband, and extremely high breakdown voltage. A variety of applications are expected with the material system utilizing these features.\",\"PeriodicalId\":6369,\"journal\":{\"name\":\"1997 IEEE Ultrasonics Symposium Proceedings. An International Symposium (Cat. No.97CH36118)\",\"volume\":\"14 10\",\"pages\":\"183-186 vol.1\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 IEEE Ultrasonics Symposium Proceedings. An International Symposium (Cat. No.97CH36118)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ULTSYM.1997.663006\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 IEEE Ultrasonics Symposium Proceedings. An International Symposium (Cat. No.97CH36118)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULTSYM.1997.663006","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

在硅片上成功地制备了三英寸的多晶金刚石片。金刚石质量的高均匀性和几乎无缺陷的金刚石表面与高质量的ZnO相结合，表现出金刚石SAW器件的优异性能。还观察到该材料体系具有超高的功率处理能力，与36 Y切割和ST切割石英相比，温度偏差较小，通带内相斜率特性低，击穿电压极高。利用这些特性的材料系统有望有各种各样的应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Diamond wafer for SAW application

A three inch wafer of polycrystalline diamond on silicon has been successfully developed. High uniformity of quality of diamond and almost defect free diamond surface associated with high quality ZnO exhibit wonderful performance of diamond SAW devices. It was also observed that this material system has super high power handling capability, smaller temperature deviation compared with 36 Y cut and ST cut quartz, low phase slope characteristics in the passband, and extremely high breakdown voltage. A variety of applications are expected with the material system utilizing these features.

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来源期刊

1997 IEEE Ultrasonics Symposium Proceedings. An International Symposium (Cat. No.97CH36118)

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