基于非对称漏极电压的扩展带宽效率增强Doherty放大器

Qianqian Lei, Songbai He, Nina Zhang, F. You, Lei Dong, Zhebin Hu
{"title":"基于非对称漏极电压的扩展带宽效率增强Doherty放大器","authors":"Qianqian Lei, Songbai He, Nina Zhang, F. You, Lei Dong, Zhebin Hu","doi":"10.1109/MWSYM.2012.6258362","DOIUrl":null,"url":null,"abstract":"This paper presents design and implementation about an asymmetrical-Doherty-power-amplifier (A-DPA). The back-off efficiency and operating bandwidth are improved through considering knee-voltage (Vknee) effect and impedance-transformation-ratio (ITR) of inverter. The A-DPA is fabricated with NXP's 7th Generation Si LDMOS device BLF7G27-75P accompanied by the proposed combining network. Within a bandwidth of 300MHz, measurements perform drain efficiency of η ≧ 41 % and Gain of 14.1±0.6 dB over 7dB output power back-off for continuous wave signal. With linearization, the ADPA shows ACLR ≦ −45.8 dBc with drain efficiency η ≧ 41.4% in 2.25∼2.55 GHz under WCDMA signal with 7.8 dB PAPR at average power of 43 dBm. This is the widest bandwidth of DPA with high drain efficiency at output power 7 dB back-off using Si LDMOS packaged devices to the best of the authors' knowledge.","PeriodicalId":6385,"journal":{"name":"2012 IEEE/MTT-S International Microwave Symposium Digest","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Efficiency-enhanced Doherty amplifier with extended bandwidth based on asymmetrical drain voltage\",\"authors\":\"Qianqian Lei, Songbai He, Nina Zhang, F. You, Lei Dong, Zhebin Hu\",\"doi\":\"10.1109/MWSYM.2012.6258362\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents design and implementation about an asymmetrical-Doherty-power-amplifier (A-DPA). The back-off efficiency and operating bandwidth are improved through considering knee-voltage (Vknee) effect and impedance-transformation-ratio (ITR) of inverter. The A-DPA is fabricated with NXP's 7th Generation Si LDMOS device BLF7G27-75P accompanied by the proposed combining network. Within a bandwidth of 300MHz, measurements perform drain efficiency of η ≧ 41 % and Gain of 14.1±0.6 dB over 7dB output power back-off for continuous wave signal. With linearization, the ADPA shows ACLR ≦ −45.8 dBc with drain efficiency η ≧ 41.4% in 2.25∼2.55 GHz under WCDMA signal with 7.8 dB PAPR at average power of 43 dBm. This is the widest bandwidth of DPA with high drain efficiency at output power 7 dB back-off using Si LDMOS packaged devices to the best of the authors' knowledge.\",\"PeriodicalId\":6385,\"journal\":{\"name\":\"2012 IEEE/MTT-S International Microwave Symposium Digest\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE/MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2012.6258362\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE/MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2012.6258362","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

摘要

介绍了一种非对称多赫蒂功率放大器(A-DPA)的设计与实现。通过考虑逆变器的膝电压(Vknee)效应和阻抗变化率(ITR),提高了回退效率和工作带宽。A-DPA采用NXP的第7代Si LDMOS器件BLF7G27-75P以及所提出的组合网络制造。在300MHz带宽范围内,连续波信号的漏极效率η≧41%,输出功率衰减7dB时增益14.1±0.6 dB。线性化后,在平均功率为43 dBm、平均PAPR为7.8 dB的WCDMA信号下,ADPA在2.25 ~ 2.55 GHz频段的ACLR≤−45.8 dBc,漏极效率η≧41.4%。据作者所知,这是DPA最宽的带宽,在输出功率为7 dB时具有高漏极效率,使用Si LDMOS封装器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Efficiency-enhanced Doherty amplifier with extended bandwidth based on asymmetrical drain voltage
This paper presents design and implementation about an asymmetrical-Doherty-power-amplifier (A-DPA). The back-off efficiency and operating bandwidth are improved through considering knee-voltage (Vknee) effect and impedance-transformation-ratio (ITR) of inverter. The A-DPA is fabricated with NXP's 7th Generation Si LDMOS device BLF7G27-75P accompanied by the proposed combining network. Within a bandwidth of 300MHz, measurements perform drain efficiency of η ≧ 41 % and Gain of 14.1±0.6 dB over 7dB output power back-off for continuous wave signal. With linearization, the ADPA shows ACLR ≦ −45.8 dBc with drain efficiency η ≧ 41.4% in 2.25∼2.55 GHz under WCDMA signal with 7.8 dB PAPR at average power of 43 dBm. This is the widest bandwidth of DPA with high drain efficiency at output power 7 dB back-off using Si LDMOS packaged devices to the best of the authors' knowledge.
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