强磁场下InAs和InSb表面太赫兹辐射的研究

Twenty Seventh International Conference on Infrared and Millimeter Waves Pub Date : 2002-12-16 DOI:10.1109/ICIMW.2002.1076063

M. Nakajima, M. Takahashi, M. Hangyo

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引用次数: 2

摘要

研究了InAs和InSb表面太赫兹辐射在5特斯拉以下的磁场依赖性。太赫兹辐射水平和垂直极化分量的强度和光谱随磁场强度的变化呈特征性变化。这些结果与光激发载流子动力学有关。

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Study of THz radiation from InAs and InSb surfaces under high magnetic fields

The magnetic field dependence of the THz radiation from InAs and InSb surfaces is studied up to 5 tesla. The intensity and spectra for horizontally and vertically polarized components of the THz radiation shows characteristic changes with magnetic field intensity. These results are discussed in relation to the photoexcited carrier dynamics.

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Twenty Seventh International Conference on Infrared and Millimeter Waves

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