Формирование периодических двухфазных структур на поверхности аморфных пленок Ge-=SUB=-2-=/SUB=-Sb-=SUB=-2-=/SUB=-Te-=SUB=-5-=/SUB=- при воздействии ультракоротких лазерных импульсов различной длительности и частоты следования

Phase change memory materials due to their high susceptibility to low-intensity light fields are extremely attractive for active microphotonics and integrated optics devices. As a result of fast phase switching, these materials change the refractive index in a wide spectral range, which has found application in information storage systems. In this work, we studied the formation of two-phase periodic structures consisting of alternating lines of amorphous and crystalline phases on the surface of thin-film Ge2Sb2Te5 phase-change memory materials exposed to ultrashort laser pulses. Periodic structures were formed at a wavelength of 1030 nm at different durations and repetition rates of light pulses. It has been established that the ordering of two-phase structures obtained at a constant energy fluence remains practically unchanged with an increase in the repetition rate from 10 kHz to 1 MHz, but a change in the pulse duration from 180 fs to 10 ps leads to a violation of the periodic structure due to the formation of extended continuously crystallized regions.