On Optimization of Manufacturing of an Amplifier to Increase Density of Bipolar Transistor Framework the Amplifier

In this paper we consider a possibility to increase density of bipolar heterotransistor framework an amplifier due to decreasing of their dimensions. The considered approach based on doping of required areas of heterostructure with specific configuration by diffusion or ion implantation. The doping finished by optimized annealing of dopant and/or radiation defects. Analysis of redistribution of dopant with account redistribution of radiation defects (after implantation of ions of dopant) for optimization of the above annealing have been done by using recently introduced analytical approach. The approach gives a possibility to analyze mass and heat transports in a heterostructure without crosslinking of solutions on interfaces between layers of the heterostructure with account nonlinearity of these transports and variation in time of their parameters.