纳米晶存储器可靠性的蒙特卡罗研究

微纳电子与智能制造 Pub Date : 2006-04-24 DOI:10.1109/ESIME.2006.1643985

R. Gusmeroli, A. Spinelli, C. M. Compagnoni, D. Ielmini, A. Lacaita

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引用次数: 1

摘要

在近十年来提出的取代传统闪存的新存储概念中，纳米晶存储器因其简单且与CMOS兼容的工艺流程而受到广泛关注。利用三维蒙特卡罗模拟器，我们研究了由于可靠性限制的纳米晶体存储技术的缩放前景。结果表明，将该技术扩展到45 nm节点以上将大大降低分布式浮栅效应带来的好处，并增加程序失效概率

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A Monte Carlo Investigation of Nanocrystal Memory Reliability

Among the new memory concepts proposed in the last decade to replace the conventional flash cell, nanocrystal memories received large attentions because of their simple and CMOS compatible process flow. Using a 3-dimensional Monte Carlo simulator, we investigated the scaling perspectives of the nanocrystal memory technology due to reliability constraints. Results show that scaling this technology beyond the 45 nm node will drastically reduce the benefits deriving from distributed floating-gate effects and increase the program fail probability

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来源期刊

微纳电子与智能制造

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发文量

145