基于电感耦合技术的90纳米CMOS v波段低噪声放大器

IF 1.3 Q3 COMPUTER SCIENCE, INFORMATION SYSTEMS

IET Networks Pub Date : 2022-10-14 DOI:10.1109/IET-ICETA56553.2022.9971648

Yen-Chung Chiang, Tai-Chung Wang

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引用次数: 1

摘要

本文提出了一种采用90纳米CMOS工艺设计的v波段低噪声放大器(LNA)。利用门偏电感与源变性电感之间的耦合效应，可以提高增益，降低噪声系数。该LNA在67 GHz时的峰值测量增益为11.14 dB。在67 GHz时，测得的最低噪声系数(NF)为4.99 dB。所提出的电路从1.2 v电源中提取17.64 mW的直流电源。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A V-band Low Noise Amplifier in 90-nm CMOS by Inductive Coupling Technique

A low-noise amplifier (LNA) with three commonsource stages designed in a 90-nm CMOS process technology for V-band applications is proposed in this conference paper. By using the coupling effect between the gate biasing inductor and source degenerative inductor, we can boost the gain and reduce the noise figure. The proposed LNA achieved a peak measured gain of 11.14 dB at 67 GHz. The measured lowest noise Figure (NF) is 4.99 dB at 67 GHz. The proposed circuit draws a 17.64 mW dc-power from a 1.2-V supply.

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来源期刊

IET Networks COMPUTER SCIENCE, INFORMATION SYSTEMS-

CiteScore

5.00

自引率

0.00%

发文量

审稿时长

33 weeks

期刊介绍： IET Networks covers the fundamental developments and advancing methodologies to achieve higher performance, optimized and dependable future networks. IET Networks is particularly interested in new ideas and superior solutions to the known and arising technological development bottlenecks at all levels of networking such as topologies, protocols, routing, relaying and resource-allocation for more efficient and more reliable provision of network services. Topics include, but are not limited to: Network Architecture, Design and Planning, Network Protocol, Software, Analysis, Simulation and Experiment, Network Technologies, Applications and Services, Network Security, Operation and Management.