硅片在硅浆中的电化学行为

Xiaolan Song , Haiping Yang , Xunda Shi , Xi He , Guanzhou Qiu
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引用次数: 4

摘要

研究了n型硅片在硅基浆料中的电化学行为,并利用电化学直流极化和交流阻抗技术研究了浆料的pH值和固含量对硅片腐蚀的影响。结果表明,这些因素在不同程度上影响着硅片的腐蚀行为,并有其合适的参数使硅片的腐蚀速率达到最大。(100)表面的腐蚀电位低于(111),而(100)的电流密度远高于(111)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrochemical behaviors of silicon wafers in silica slurry

The electrochemical behaviors of n-type silicon wafers in silica-based slurry were investigated, and the influences of the pH value and solid content of the slurry on the corrosion of silicon wafers were studied by using electrochemical DC polarization and AC impedance techniques. The results revealed that these factors affected the corrosion behaviors of silicon wafers to different degrees and had their suitable parameters that made the maximum corrosion rate of the wafers. The corrosion potential of (100) surface was lower than that of (111), whereas the current density of (100) was much higher than that of (111).

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