本征和非本征半导体热EMF中的1/f噪声

Physica Pub Date : 1974-10-01 DOI:10.1016/0031-8914(74)90277-8

Th.G.M. Kleinpenning

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引用次数: 66

摘要

在本征锗和非本征锗及硅的开路热电动势中都观察到1/f噪声。实验结果只能通过假设1/f噪声是由于自由电荷载流子迁移率的波动来解释。本征锗的开路热电动势的1/f噪声行为类似于离子水溶液的浓缩池的开路电动势的噪声行为。

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1/f noise in thermo EMF of intrinsic and extrinsic semiconductors

1/f noise has been observed in the open circuit thermo e.m.f. of both intrinsic germanium and extrinsic germanium and silicon. The experimental results can be explained only by assuming that the 1/f noise is due to fluctuations in the mobility of free charge carriers. The 1/f noise behaviour of the open circuit thermo e.m.f. of intrinsic germanium is similar to the noise behaviour of the open circuit e.m.f. of concentration cells of ionic aqueous solutions.

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Physica

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