半导体功率二极管的边界确定Auger复合模型

I.A. Henderson, J. McGhee
{"title":"半导体功率二极管的边界确定Auger复合模型","authors":"I.A. Henderson, J. McGhee","doi":"10.1016/0270-0255(87)90590-2","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":100895,"journal":{"name":"Mathematical Modelling","volume":"8 ","pages":"279-282"},"PeriodicalIF":0.0000,"publicationDate":"1987-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0270-0255(87)90590-2","citationCount":"4","resultStr":"{\"title\":\"A boundary determined Auger recombination model for semiconductor power diodes\",\"authors\":\"I.A. Henderson, J. McGhee\",\"doi\":\"10.1016/0270-0255(87)90590-2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":100895,\"journal\":{\"name\":\"Mathematical Modelling\",\"volume\":\"8 \",\"pages\":\"279-282\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1987-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0270-0255(87)90590-2\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Mathematical Modelling\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0270025587905902\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Mathematical Modelling","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0270025587905902","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

摘要

使用任意结和对称PIN半导体二极管来获得边界确定的电流密度的方程。结果表明,电流密度在很大程度上取决于结两侧的载流子密度梯度。扩散方程的载流子密度梯度解允许根据边界条件检查体区俄歇复合。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A boundary determined Auger recombination model for semiconductor power diodes
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信