通过表面硅化保护铜

F. Rebuffat, A. Galerie, M. Caillet, J. Besson
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引用次数: 0

摘要

通过在700°C下用甲硅烷处理铜制备了Cu5Si涂层,并研究了其在高温氧气中的行为。这种涂层的保护效率很好,因为在高达600°C的温度下无法检测到氧化。在更高的温度下,氧化皮由分别与金属接触的Cu2O、SiO2和CuO的三层组成。动力学曲线为S型。它们的第一部分可能对应于导致二氧化硅层形成的成核过程。在下面的阶段中,假设反应速率由氧和铜通过SiO2和CuO层的同时扩散来控制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
La protection du cuivre par siliciuration superficielle

A coating of Cu5Si on Cu was prepared by treating copper with monosilane at 700°C and its behaviour in oxygen at high temperature investigated. The protective efficiency of this coating is good as no oxidation could be detected up to 600°C. At higher temperatures, the oxidation scale consists of three layers respectively of Cu2O in contact with the metal, SiO2, and CuO. The kinetic curves are of sigmoidal type. Their first part corresponds probably to a nucleation process leading to the formation of the silica layer. In the following stages, the reaction rate is assumed to be controlled by the simultaneous diffusion of oxygen and copper through the SiO2 and CuO layers.

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