热压氮化硅的氧化动力学

G.N. Babini, P. Vincenzini
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引用次数: 0

摘要

推导了一个用于评估热压氮化硅(HPSN)的简化模型,该模型考虑了晶界相的数量和类型以及Si3N4/氧化物反应界面处的成分。事实证明,该模型适用于解释包括MgO、CeO2、(CeO2+SiO2)、(Y2O3+SiO2)、(MgO+Y2O3)添加剂在内的多种材料的氧化行为。关于如何提高HPSN的抗氧化性,也可以进行一些推导。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Oxidation kinetics of hot-pressed silicon nitride

A simplified model for evaluation of hot-pressed silicon nitride (HPSN) has been derived which accounts for the amount and type of grain boundary phase and for the composition at the Si3N4/oxide reaction interface. The model proved suitable for explaining the oxidation behaviour of a wide range of materials including MgO, CeO2, (CeO2 + SiO2), (Y2O3 + SiO2), (MgO + Y2O3) additives. Some deductions are also possible on how to improve the oxidation resistance of HPSN.

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