Growth Features of 3C-SiC/Si Films Fabricated by HTCVD

This work is devoted to the study of the morphology and structure of 3C-SiC/Si films obtained by the high-temperature chemical vapor deposition (HT CVD) method. Epitaxial growth is achieved by transforming the crystal by coordinated substitution of atoms, in which the overall structure of bonds between atoms is not destroyed. At the first stage of the conversion, the first half of silicon atoms Si is successively replaced by carbon atoms C as a result of reaction of Si with gas CO, and an epitaxial layer of cubic silicon carbide SiC-3C is obtained. At the second stage, the remaining half of Si atoms is consistently replaced by C atoms due to the reaction of SiC with CF4 gas. Depending on the orientation of the silicon surface, the pressure of the reagent gas, the temperature and time of growth, carbon structures with various properties are obtained, from nanodiamonds to nanotubes and onion carbon. The key feature of this method is that the substrate orders the resulting structures using the initial chemical bonds between atoms in silicon. Photographs of the surface of the structures are presented, demonstrating the features of silicon carbide film growth at different levels of the substrate holder. Analysis of rotational X-ray diffraction patterns showed the presence of silicon carbide films of the 3-C polytype.