{"title":"微米尺度上的定量成分制图","authors":"D. Newbury","doi":"10.6028/jres.093.141","DOIUrl":null,"url":null,"abstract":"[38] Stevie, F. A., Kahora, P. M., Singh, S., and Kroko, L., Atomic and Molecular Relative Secondary Ion Yields of 46 Elements in Si for 0?and Cs' Bombardment, Proceedings of SIMS VI Conference, Versailles, 1987, J. Wiley, Chichester, in press. [39] Wilson, R. G. and Novak, S. W., Systematics of SIMS Relative Sensitivity Factors versus Electron Affinity and Ionization Potential for Si, Ge, GaAs, GaP, InP and HgCdTe Determined from Implant Calibration Standards for about 50 Elements, Proceedings of the SIMS VI Conference, Versailles, 1987, J. Wiley, Chichester, in press.","PeriodicalId":17082,"journal":{"name":"Journal of research of the National Bureau of Standards","volume":"93 1","pages":"518 - 520"},"PeriodicalIF":0.0000,"publicationDate":"1988-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Quantitative Compositional Mapping on a Micrometer Scale\",\"authors\":\"D. Newbury\",\"doi\":\"10.6028/jres.093.141\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"[38] Stevie, F. A., Kahora, P. M., Singh, S., and Kroko, L., Atomic and Molecular Relative Secondary Ion Yields of 46 Elements in Si for 0?and Cs' Bombardment, Proceedings of SIMS VI Conference, Versailles, 1987, J. Wiley, Chichester, in press. [39] Wilson, R. G. and Novak, S. W., Systematics of SIMS Relative Sensitivity Factors versus Electron Affinity and Ionization Potential for Si, Ge, GaAs, GaP, InP and HgCdTe Determined from Implant Calibration Standards for about 50 Elements, Proceedings of the SIMS VI Conference, Versailles, 1987, J. Wiley, Chichester, in press.\",\"PeriodicalId\":17082,\"journal\":{\"name\":\"Journal of research of the National Bureau of Standards\",\"volume\":\"93 1\",\"pages\":\"518 - 520\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of research of the National Bureau of Standards\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.6028/jres.093.141\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of research of the National Bureau of Standards","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.6028/jres.093.141","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
[10] Stevie, F. A.， Kahora, P. M.， Singh, S.，和Kroko, L.， Si中46种元素的原子和分子相对二次离子产率和Cs的轰炸，模拟人生第六届会议论文集，凡尔赛，1987年，J. Wiley，奇切斯特，在出版社。[10] Wilson, R. G.和Novak, S. W.， SIMS相对灵敏度因子对Si, Ge, GaAs, GaP, InP和HgCdTe的电子亲和力和电离势的系统分析，从植入物校准标准确定的约50种元素，SIMS VI会议论文集，凡尔赛，1987年，J. Wiley, Chichester，出版中。
Quantitative Compositional Mapping on a Micrometer Scale
[38] Stevie, F. A., Kahora, P. M., Singh, S., and Kroko, L., Atomic and Molecular Relative Secondary Ion Yields of 46 Elements in Si for 0?and Cs' Bombardment, Proceedings of SIMS VI Conference, Versailles, 1987, J. Wiley, Chichester, in press. [39] Wilson, R. G. and Novak, S. W., Systematics of SIMS Relative Sensitivity Factors versus Electron Affinity and Ionization Potential for Si, Ge, GaAs, GaP, InP and HgCdTe Determined from Implant Calibration Standards for about 50 Elements, Proceedings of the SIMS VI Conference, Versailles, 1987, J. Wiley, Chichester, in press.
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