反并联忆阻电路的分析

Q4 Engineering

Informatyka Automatyka Pomiary w Gospodarce i Ochronie Srodowiska Pub Date : 2018-05-30 DOI:10.5604/01.3001.0012.0696

V. Mladenov, S. Kirilov

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引用次数: 0

摘要

本文的基本目的是利用改进的边界条件忆阻器(BCM)模型和有限差分法，对具有不同状态变量初值的两个等效忆阻器元件的反并联忆阻电路进行扩展研究和计算机分析。本文分别研究了软开关和硬开关模式下不同幅度正弦电源电流的忆阻电路。给出了状态变量的初始值对电路性能的影响。分析了等效电流电压和忆阻磁通以及忆阻电路的其他重要关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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ANALYSIS OF AN ANTI-PARALLEL MEMRISTOR CIRCUIT

The basic purpose of the present paper is to propose an extended investigation and computer analysis of an anti-parallel memristor circuit with two equivalent memristor elements with different initial values of the state variables using a modified Boundary Condition Memristor (BCM) Model and the finite differences method. The memristor circuit is investigated for sinusoidal supply current at different magnitudes – for soft-switching and hard-switching modes, respectively. The influence of the initial values of the state variables on the circuit’s behaviour is presented as well. The equivalent i-v and memristance-flux and the other important relationshipsof the memristor circuit are also analyzed.

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来源期刊

Informatyka Automatyka Pomiary w Gospodarce i Ochronie Srodowiska

CiteScore

0.90

自引率

0.00%

发文量

审稿时长

10 weeks