CrSb/InP(001)的物理性质:半金属界面的影响

A. Boochani, S. Solymani, S. Rezaee, N. B. Nezafat, S. Tadayon, Amin Aminian
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引用次数: 2

摘要

本研究将密度泛函理论应用于改进的平坦波框架。首先,计算了CrSb-ZB化合物在(GGA & LDA)和GGA + U近似下的表征、弹性和半金属性质。弹性计算表明,CrSb-ZB是一种延性材料。然而,代比温度的计算表明,CrSb-ZB是亚稳定的。GGA + u也保留了CrSb/InP(001)界面的半金属性特征。CrSb在少数自旋情况下的导带最小值(CBM)比GaSb高约1.26 eV,这表明主自旋可以注入GaSb而不被翻转到次要自旋的导带。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Physical Properties of CrSb/InP(001): Effect of Interface in Half-Metallic
In this study, density functional theory in improved flat waves’ framework has been used. First of all, characterization, elastic and half-metallic properties of the CrSb-ZB compound at (GGA & LDA) and GGA + U approximation are calculated. The elastic calculations indicate that the CrSb-ZB is a ductile material. However, the calculation of Deby temperature indicates that the CrSb-ZB is meta-stable. The half-metallicity character is also preserved at CrSb/InP (001) interface by GGA + U. The conduction band minimum (CBM) of CrSb in the minority spin case lies about 1.26 eV above that of GaSb, suggesting that the major spin can be injected into GaSb without being flipped to the conduction bands of the minor spin.
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