基于体偏置技术的超宽带低功耗CMOS LNA系统实现

Meng-Ting Hsu, Kun-Long Wu, Wen-Chen Chiu
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引用次数: 8

摘要

本文研究了一种基于级联共源和电流复用拓扑结构的低功耗CMOS超宽带LNA。提出并详细讨论了从窄带到超宽带的系统设计方法。采用体偏置技术和电流复用拓扑结构可实现功耗降低。主晶体管器件M1的最佳宽度由栅极和源端之间具有内寄生电容的功率约束噪声优化决定。本文给出了用高频小信号模型推导信号放大S21的方法。采用逐步分析的方法对整个电路进行优化设计。测试结果表明,该电路具有良好的S11、增益、噪声系数和功耗。从测量结果来看,S11小于-12 dB, S22小于-10 dB,正向增益S21的平均值为12 dB。整个频段内噪声系数为4 ~ 5.7 dB。该电路包括输出缓冲器在内的总功耗为4.6 mW,电源电压为1 V。这项工作是在标准的台积电0.18 μm CMOS工艺技术上实现的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Systematic Approaches of UWB Low-Power CMOS LNA with Body Biased Technique
This paper presents research on a low power CMOS UWB LNA based on a cascoded common source and current-reused topology. A systematic approach for the design procedure from narrow band to UWB is developed and discussed in detail. The power reduction can be achieved by using body biased technique and current-reused topology. The optimum width of the major transistor device M1 is determined by the power-constraint noise optimization with inner parasitic capacitance between the gate and source terminal. The derivation of the signal amplification S21 by high frequency small signal model is displayed in the paper. The optimum design of the complete circuit was studied in a step by step analysis. The measurements results show that the proposed circuit has superior S11, gain, noise figure, and power consumption. From the measured results, S11 is lower than -12 dB, S22 is lower than -10 dB and forward gain S21 has an average value with 12 dB. The noise figure is from 4 to 5.7 dB within the whole band. The total power consumption of the proposed circuit including the output buffer is 4.6 mW with a supply voltage of 1 V. This work is implemented in a standard TSMC 0.18 μm CMOS process technology.
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