A. Ates, M. Saglam, B. Güzeldir, M. Yıldırım, Aykut Astam
{"title":"Cu/Cu /p-Si/Al结构的电学特性","authors":"A. Ates, M. Saglam, B. Güzeldir, M. Yıldırım, Aykut Astam","doi":"10.5072/ZENODO.34426","DOIUrl":null,"url":null,"abstract":"Cu/CuS/p-Si/Al structure formed using CuS thin film on p-Si substrate. CuS thin film has been grown with using Successive Ionic Layer Adsorption and Reaction (SILAR) method. The Cu/CuS/p-Si/Al structure has demonstrated clearly rectifying behavior by the current-voltage (I-V) curves studied at room temperature. The characteristic parameters such as barrier height, ideality factor and series resistance of Cu/CuS/p-Si/Al structure have been calculated from the forward bias I-V and reverse bias C -2 -V characteristics. The ideality factor and barrier height have been obtained as n=1.63 and Φ b =0.69 eV by applying a thermo-ionic emission theory. At high current densities in the forward direction, the series resistance effect has been observed. The values of R s obtained from dV/d(InI) - / and H(I) - / plots are near to each others (R s =340.33 □ and R s =346.24 □, respectively). In the same way, the barrier height calculated from C -2 -V characteristics have been varied from 0.523 to 0.601 eV. Furthermore, the density distribution of interface states of the multilayer device has been obtained from the semi-log forward bias I-V characteristics. It has been seen that the N ss has almost an exponential rise with bias voltage from top of the valance band toward to mid gap.","PeriodicalId":16679,"journal":{"name":"Journal of Optoelectronics and Advanced Materials","volume":null,"pages":null},"PeriodicalIF":0.6000,"publicationDate":"2010-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"The electrical characteristics of Cu/CuS/p-Si/Al structure\",\"authors\":\"A. Ates, M. Saglam, B. Güzeldir, M. Yıldırım, Aykut Astam\",\"doi\":\"10.5072/ZENODO.34426\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Cu/CuS/p-Si/Al structure formed using CuS thin film on p-Si substrate. CuS thin film has been grown with using Successive Ionic Layer Adsorption and Reaction (SILAR) method. The Cu/CuS/p-Si/Al structure has demonstrated clearly rectifying behavior by the current-voltage (I-V) curves studied at room temperature. The characteristic parameters such as barrier height, ideality factor and series resistance of Cu/CuS/p-Si/Al structure have been calculated from the forward bias I-V and reverse bias C -2 -V characteristics. The ideality factor and barrier height have been obtained as n=1.63 and Φ b =0.69 eV by applying a thermo-ionic emission theory. At high current densities in the forward direction, the series resistance effect has been observed. The values of R s obtained from dV/d(InI) - / and H(I) - / plots are near to each others (R s =340.33 □ and R s =346.24 □, respectively). In the same way, the barrier height calculated from C -2 -V characteristics have been varied from 0.523 to 0.601 eV. Furthermore, the density distribution of interface states of the multilayer device has been obtained from the semi-log forward bias I-V characteristics. It has been seen that the N ss has almost an exponential rise with bias voltage from top of the valance band toward to mid gap.\",\"PeriodicalId\":16679,\"journal\":{\"name\":\"Journal of Optoelectronics and Advanced Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2010-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Optoelectronics and Advanced Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.5072/ZENODO.34426\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Optoelectronics and Advanced Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.5072/ZENODO.34426","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
The electrical characteristics of Cu/CuS/p-Si/Al structure
Cu/CuS/p-Si/Al structure formed using CuS thin film on p-Si substrate. CuS thin film has been grown with using Successive Ionic Layer Adsorption and Reaction (SILAR) method. The Cu/CuS/p-Si/Al structure has demonstrated clearly rectifying behavior by the current-voltage (I-V) curves studied at room temperature. The characteristic parameters such as barrier height, ideality factor and series resistance of Cu/CuS/p-Si/Al structure have been calculated from the forward bias I-V and reverse bias C -2 -V characteristics. The ideality factor and barrier height have been obtained as n=1.63 and Φ b =0.69 eV by applying a thermo-ionic emission theory. At high current densities in the forward direction, the series resistance effect has been observed. The values of R s obtained from dV/d(InI) - / and H(I) - / plots are near to each others (R s =340.33 □ and R s =346.24 □, respectively). In the same way, the barrier height calculated from C -2 -V characteristics have been varied from 0.523 to 0.601 eV. Furthermore, the density distribution of interface states of the multilayer device has been obtained from the semi-log forward bias I-V characteristics. It has been seen that the N ss has almost an exponential rise with bias voltage from top of the valance band toward to mid gap.
期刊介绍:
The Journal of Optoelectronics and Advanced Materials (J. Optoelectron. Adv. M.) appears with 12 issues per year and publishes papers in the field of optoelectronics, photonics, and new advanced materials (nonlinear optical materials, crystalline and non-crystalline materials, nano-structured materials, magnetic materials, functional and smart materials, materials based on polymers, biomaterials) of relevance for optoelectronics and photonics.