辛烷基三乙氧基硅烷Langmuir-Blodgett薄膜的制备

IF 0.6 4区材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY

Journal of Optoelectronics and Advanced Materials Pub Date : 2010-01-01 DOI:10.5072/ZENODO.33162

Keziban Can, Mustafa Ozmen, L. Gurfidan, I. H. Gubbuk, E. Kaymak, M. Ersoz, Z. Ozbek, R. Çapan

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引用次数: 2

摘要

本文用Langmuir等温线图研究了c8tes分子在空气-水界面的单层性质。制备了这些分子均匀、高质量的Langmuir-Blodgett薄膜，并通过紫外可见、原子力显微镜和石英晶体微天平测量对其进行了表征，以确定这些薄膜的沉积质量。在11mn /m的沉积压力下获得了0.99左右的高传递比。水的接触角为93.17°，表面自由能为23.8 mN/m。在无水条件下使用可溶性三乙氧基硅烷偶联剂可以产生表面缺陷最少的表面。c8 TES材料已被证明可以产生组织良好的LB膜，并被证明是生物传感器领域应用的良好候选者。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Fabrication of octyltriethoxysilane Langmuir-Blodgett thin film

In the present work the monolayer properties at the air-water interface of Octyltriethoxysilane (C 8 TES) molecules are investigated using Langmuir isotherm graphs. Uniform and high quality Langmuir-Blodgett films of these molecules are prepared and characterized by UV-visible, atomic force microscopy and quartz crystal microbalance measurements to determine the deposition quality of these films. High transfer ratio of about 0.99 at a deposition pressure of 11 mN/m was obtained. The contact angle of water was 93.17° with a surface free energy of 23.8 mN/m. The use of soluble triethoxybased silane coupling agents under anhydrous conditions is shown to produce surfaces with a minimal number of surface defects. C 8 TES material has been demonstrated to produce well organised LB films and is shown to be a good candidate for application in the field of biosensors.

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来源期刊

Journal of Optoelectronics and Advanced Materials 工程技术-材料科学：综合

CiteScore

0.90

自引率

20.00%

发文量

审稿时长

6.5 months

期刊介绍： The Journal of Optoelectronics and Advanced Materials (J. Optoelectron. Adv. M.) appears with 12 issues per year and publishes papers in the field of optoelectronics, photonics, and new advanced materials (nonlinear optical materials, crystalline and non-crystalline materials, nano-structured materials, magnetic materials, functional and smart materials, materials based on polymers, biomaterials) of relevance for optoelectronics and photonics.